PART |
Description |
Maker |
CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100 CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的(256 × 36/512K × 18)流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
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IDT71V65603 IDT71V65803S150PFI IDT71V65803S150BQI |
256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs 256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs ZBT? Feature 3.3V I/O, Burst Counter Pipelined Outputs 256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs From old datasheet system 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs
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IDT[Integrated Device Technology]
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CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的(256 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1361C-133AXC CY7C1361C-133BGI CY7C1361C-133AJX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 9兆位56 × 36/512K × 18)流通过的SRAM 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 6.5 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
A67P9318E-4.2F A67P8336 A67P8336E A67P8336E-2.6 A6 |
DIODE ZENER SINGLE 500mW 5.6Vz 20mA-Izt 0.05 5uA-Ir 3Vr DO35-GLASS 5K/AMMO 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 12k × 1856 × 36 LVTTL,流水线ZeBL的SRAM GIGABASE 350 CAT5E PATCH 5 FT, SNAGLESS, WHITE 12k × 1856 × 36 LVTTL,流水线ZeBL的SRAM 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 512k × 1856 × 36 LVTTL,流水线ZeBL的SRAM 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 12k × 18256 × 36 LVTTL,流水线ZeBL的SRAM
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AMICC[AMIC Technology] AMIC Technology Corporation AMIC Technology, Corp.
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GS881E18BT-300 GS881E32BGT-200I GS881E32BGD-333I G |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 6.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 4.5 ns, PBGA165 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
CYD09S18V-100BBC CYD09S18V-100BBI CYD02S18V-133BBC |
512K X 18 DUAL-PORT SRAM, 4.7 ns, PBGA256 17 X 17 MM, 1 MM PITCH, LEAD FREE, FBGA-256 FLEx18 3.3V 64K/128K/256K/512K x 18 Synchronous Dual-Port RAM FLEx18垄芒 3.3V 64K/128K/256K/512K x 18 Synchronous Dual-Port RAM
|
Cypress Semiconductor, Corp.
|
27C4096-12 27C4096-10 |
4M-BIT [512K x 8/256K x 16] CMOS EPROM 4分位[12k × 8/256K × 16]的CMOS存储
|
Macronix International Co., Ltd.
|
GS88136AD-150 |
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
IS61LF51218A-7.5B3 IS61LF51218A-7.5B2 IS61LF51218A |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 256K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
|
HY29LV400TT90I HY29LV400BT90I |
4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory 4兆位(为512k × 8/256K × 16)低压快闪记忆体
|
Hynix Semiconductor, Inc.
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